cystech electronics corp. spec. no. : c602k3 issued date : 2011.12.21 revised date :2013.12.25 page no. : 1/7 BTC2655K3 cystek product specification general purpose npn epitaxial planar transistor BTC2655K3 features ? high breakdown voltage, bv ceo 60v ? large continuous collector current capability ? low collector saturation voltage ? pb-free lead plating package symbol outline ordering information device package shipping BTC2655K3-0-tb-g to-92l (pb-free lead plating and halogen-free package) 2000 pcs / tape & box BTC2655K3-0-bm-g to-92l (pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton BTC2655K3 to-92l b base c collector e emitter bv ceo 60v i c 2a r cesat(max) 300m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb : 2000 pcs / tape & box ; bm : 500 pcs/bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c602k3 issued date : 2011.12.21 revised date :2013.12.25 page no. : 2/7 BTC2655K3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7 v collector current (dc) i c 2 a collector current (pulse) i cp 5 (note) a base current i b 0.5 a power dissipation p d 900 mw thermal resistance, junction to ambient r ja 139 c/w operating junction and storage temp erature range tj ; tstg -55~+150 c note : pulse test, pulse width 300 s, duty cycle 2% characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 120 - - v i c =50 a bv ceo 60 - - v i c =1ma bv ebo 7 - - v i e =50 a i cbo - - 100 na v cb =120v i ebo - - 100 na v eb =7v *v ce(sat) - 100 300 mv i c =1a, i b =50ma *r ce(sat) - 100 300 m i c =1a, i b =50ma *v ce(sat) - - 350 mv i c =1a, i b =20ma *v be(sat) 0.5 0.9 1.2 v i c =1a, i b =50ma *h fe 1 200 - 400 - v ce =2v, i c =500ma *h fe 2 80 - - - v ce =2v, i c =1.5a f t - 250 - mhz v ce =2v, i c =300ma, f=100mhz cob - 13 - pf v cb =10v, i e =0a,f=1mhz ton - 40 - tstg - 500 - tf - 120 - ns v cc =30v, i c =1a, i b 1=-i b 2=33ma, r l =30 *pulse test: pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c602k3 issued date : 2011.12.21 revised date :2013.12.25 page no. : 3/7 BTC2655K3 cystek product specification typical characteristics emitter grounded output characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=0 ib=2ma ib=4ma ib=6ma ib=8ma ib=10ma emitter grounded output characteristics 0 100 200 300 400 500 600 700 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=500ua ib=1ma ib=1.5ma ib=2ma ib = 2. 5m a emitter grounded output characteristics 0 20 40 60 80 100 120 140 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=100ua ib=200ua ib=300ua ib=400ua ib=500ua ib=0 current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=50ib ic=20ib ic=100ib vce(sat) saturation voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat)@ic=50ib
cystech electronics corp. spec. no. : c602k3 issued date : 2011.12.21 revised date :2013.12.25 page no. : 4/7 BTC2655K3 cystek product specification characteristic curves(cont.) on voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vce=2v capacitance characteristics 1 10 100 1000 0.1 1 10 100 reverse-biased voltage---(v) capacitance---(pf) f=1mhz cib cob cutoff frequency vs collector current 10 100 1000 1 10 100 1000 collector current --- ic(ma) cutoff frequency---ft(mhz) ft@vce=5v power derating curve 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw)
cystech electronics corp. spec. no. : c602k3 issued date : 2011.12.21 revised date :2013.12.25 page no. : 5/7 BTC2655K3 cystek product specification to-92l taping outline millimeters dim item min. max. a1 component body width 4.70 5.10 a component body height 7.80 8.20 t component body thickness 3.70 4.10 d lead wire diameter 0.35 0.55 d1 lead wire diameter 1 0.60 0.80 p pitch of component 12.40 13.00 p0 feed hole pitch 12.50 12.90 p2 hole center to component center 6.05 6.65 f1, f2 lead to lead distance 2.20 2.80 h component alignment, f-r -1.00 1.00 w tape width 17.50 19.00 w0 hole down tape width 5.50 6.50 w1 hole position 8.50 9.50 w2 hole down tape position - 1.00 h height of component fr om tape center 19.00 21.00 h0 lead wire clinch height 15.50 16.50 l1 lead wire (tape portion) 2.50 - d0 feed hole diameter 3.80 4.20 t1 taped lead thickness 0.35 0.45 t2 carrier tape thickness 0.15 0.25 p1 position of hole 3.55 4.15 p component alignment -1.00 1.00
cystech electronics corp. spec. no. : c602k3 issued date : 2011.12.21 revised date :2013.12.25 page no. : 6/7 BTC2655K3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 217 c 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c602k3 issued date : 2011.12.21 revised date :2013.12.25 page no. : 7/7 BTC2655K3 cystek product specification to-92l dimension *: typical inches millimeters inches c2655 marking: s t yle: pin 1.emitter 2.colle ctor 3.ba se 3-l ead t o -9 2l plasti c pa ckage cys t ek pa ck a g e code: k3 product name date code: y ear+month y ear: 7 2007, 8 20 08 9 9, a 10, b 11 , c 12 month: 1 1, 2 2, ??? , m i l l i m e t e r s dim m i n . m a x . m i n . m a x . dim m i n . m a x . m i n . m a x . a 0 . 1 4 6 0 . 1 6 1 3 . 7 0 0 4 . 1 0 0 e 0 . 3 0 7 0 . 3 2 3 7 . 8 0 0 8 . 2 0 0 a 1 0 . 0 5 0 0 . 0 6 2 1 . 2 8 0 1 . 5 8 0 e * 0 . 0 5 * 1 . 2 7 0 b 0 . 0 1 4 0 . 0 2 2 0 . 3 5 0 0 . 5 5 0 e 1 0 . 0 9 6 0 . 1 0 4 2 . 4 4 0 2 . 6 4 0 b 1 0 . 0 2 4 0 . 0 3 1 0 . 6 0 0 0 . 8 0 0 l 0 . 5 4 3 0 . 5 5 9 1 3 . 8 0 0 1 4 . 2 0 0 c 0 . 0 1 4 0 . 0 1 8 0 . 3 5 0 0 . 4 5 0 ? - 0 . 0 6 3 - 1 . 6 0 0 d 0 . 1 8 5 0 . 2 0 1 4 . 7 0 0 5 . 1 0 0 h 0 . 0 0 0 0 . 0 1 2 0 . 0 0 0 0 . 3 0 0 d 1 0 . 1 5 7 - 4 . 0 0 0 - note s: 1.controlling dimension: millimeter s. 2.maximum lead thickness include s lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is an y q uestion w i th p a ck ing specification or p a cking metho d , please c ont act y our local c y s t ek sales of fice. material: ? lead: pur e tin plated. ? mold compou n d : epoxy resin fa mily , flammabilit y solid burning cla ss: ul94v -0. im portan t n o tice : ? all rights are re served. reprod u c tion in w hole or in part is prohibited w i thout the p r ior w r itten a pprov al of c y stek. ? c y stek reserv es the right to m a ke changes to its products w i tho u t notice. ? cy st e k semic ond uct o r pr odu cts are n o t warr ante d t o be s u it able f o r use i n l i fe-su p p o rt a p p licatio ns, or sys tems. ? c y stek assumes no liability fo r an y consequenc e of customer pr oduct design, infringement of pat e n ts, or application assistance .
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